ReS2 based high-k dielectric stack charge-trapping and synaptic memory
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چکیده
منابع مشابه
Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack
1 Introduction Hf-based silicates and aluminates showing good thermal stability [1] and favorable energy-band alignment [2] have been intensively studied as most promising alternative gate dielectrics. Despite a number of efforts to improve the dielectric properties of such high-k thin films, reliability issues such as charge trapping and dielectric wear-out are still matters of research [3, 4]...
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Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lantha...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2020
ISSN: 0021-4922,1347-4065
DOI: 10.35848/1347-4065/ab7279